The formation mechanisms of dislocation networks in twisted silicon
- 1 November 1980
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 42 (5), 661-670
- https://doi.org/10.1080/01418618008241844
Abstract
A weak-beam TEM analysis of various kinds of dislocation mesh reveals that in twisted silicon crystals two different processes participate in forming hexagonal networks. Rhombic ones are generated by at least one more mechanism. The influence of multiple slip and heat treatment is discussed.Keywords
This publication has 8 references indexed in Scilit:
- Dislocation networks in twisted siliconPhilosophical Magazine A, 1980
- On the correlation of constrictions with jogs in dissociated dislocations in germaniumPhilosophical Magazine A, 1980
- On the mobility of dislocations in germanium and siliconPhilosophical Magazine, 1977
- The dissociation of dislocations in siliconProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1971
- Formation of twist boundaries in germanium deformed in torsionPhysica Status Solidi (b), 1971
- Intrinsic and extrinsic nodes in a gold-tin alloyPhilosophical Magazine, 1964
- Dislocation interactions in face-centred cubic metals, with particular reference to stainless steelProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959
- Dislocation Nodes in Face-Centred Cubic LatticesProceedings of the Physical Society. Section B, 1953