Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers
- 30 April 2002
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 91-92, 303-307
- https://doi.org/10.1016/s0921-5107(01)01050-9
Abstract
No abstract availableFunding Information
- Natural Science Foundation of Fujian Province
- National Natural Science Foundation of China
- Ministry of Education
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