Performance of 1.5µλ/4-shifted DFB-SIPBH laser diodes with electron beam defined and reactive ion-etched gratings

Abstract

1.5µm λ/4-shifted DFB-SIPBH laser diodes were made with electron-beam-defined and reactive ion etched gratings. The surface damage created by the reactive ion etching has no adverse effect on the device performances. The resultant devices with a 254 µm cavity length had a minimum linewidth of 3 MHz and a 3 dB modulation bandwidth of 7 GHz.