Characteristics of offset-structure polycrystalline-silicon thin-film transistors
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (1), 23-25
- https://doi.org/10.1109/55.20401
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Anomalous leakage current in LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1985
- Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride sourceIEEE Electron Device Letters, 1984
- Effects of grain boundary passivation on the characteristics of p-channel MOSFETs in LPCVD polysiliconElectronics Letters, 1983
- Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. IJapanese Journal of Applied Physics, 1982