Control of polarity of heteroepitaxial ZnO films by interface engineering
- 6 December 2001
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 190 (1-4), 491-497
- https://doi.org/10.1016/s0169-4332(01)00924-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Faceted inversion domain boundary in GaN films doped with MgApplied Physics Letters, 2000
- ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al2O3Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- MBE growth of high-quality ZnO films on epi-GaNJournal of Crystal Growth, 2000
- Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layerApplied Physics Letters, 2000
- Inversion of wurtzite GaN(0001) by exposure to magnesiumApplied Physics Letters, 1999
- Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopyApplied Physics Letters, 1998