1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer
- 1 April 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 10 (4), 495-497
- https://doi.org/10.1109/68.662572
Abstract
1.3-/spl mu/m AlGaInAs-AlGaInAs strained multiple-quantum-well (MQW) lasers with a p-AlInAs electron stopper layer have been fabricated. The electron stopper layer was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum operating temperature of 155/spl deg/C was achieved, which was 20/spl deg/C higher than that without the stopper layer.Keywords
This publication has 7 references indexed in Scilit:
- High temperature operation of AlGaInAs/InP lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-threshold and high-temperature operation of InGaAlAs-InP lasersIEEE Photonics Technology Letters, 1997
- Lasing characteristics under high temperature operation of 1.55 µm strained InGaAsP/InGaAlAs MQW laser with InAlAs electron stopper layerElectronics Letters, 1995
- Strained GaInAs-AlGaInAs 1.5-μm-wavelength multiquantum-well lasers loaded with GaInAs-AlInAs multiquantum barriers at the p-side optical confinement layerIEEE Journal of Selected Topics in Quantum Electronics, 1995
- Novel design of AlGaInAs-InP lasers operating at 1.3 μmIEEE Journal of Quantum Electronics, 1995
- High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applicationsIEEE Journal of Quantum Electronics, 1994
- High temperature characteristics of InGaAsP/InP laser structuresApplied Physics Letters, 1993