This paper reports on the experimental results on the characteristics of the single-crystal Cu2O diodes, annealed at a pressure of 10−6 Torr at a temperature of 800 °C. In contrast to our previous report on oxidized samples which showed the characteristics of double injection diodes, these diodes exhibit the characteristics of single-carrier space-charge-limited (SCL) conduction. The conduction mechanism was confirmed by measurements on the I–V characteristics at various temperatures, the thickness vs. current relation at a given voltage, the effect of photomemory on the I–V characteristics, and the transient current response to applied voltage steps. The results also indicate that there are continuous levels of localized states in these samples in the range 0.06 eV to 0.47 eV above the valence band edge.