Effect of Hydrogen Gas on c-Axis Oriented AlN Films Prepared by Reactive Magnetron Sputtering
- 1 March 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (3), L169
- https://doi.org/10.1143/jjap.20.l169
Abstract
AlN films were deposited on glass substrates by reactive dc magnetron sputtering in an atmosphere of pure nitrogen gas or a mixed gas of hydrogen and nitrogen. The AlN films deposited in the nitrogen gas had a c-axis perpendicular to the substrate surface. On the other hand, the film deposited in the gas with hydrogen added showed a c-axis parallel to the substrate surface. Optical transmittance of the parallel oriented films was better than that of the perpendicularly oriented films and there was a great difference in the microstructure of the film surface between these two films.Keywords
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