Numerical Studies of Charge Collection and Funneling in Silicon Device

1 January 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 31 (6), 1161-1166
https://doi.org/10.1109/tns.1984.4333475

Abstract

The results of a recently completed numerical study of charge and current transients following passage of ionizing particle through N+P diodes, and its dependence on excess carrier density, track and device length, are discussed.

Keywords

SILICON DEVICES
CHARGE CARRIER DENSITY
POISSON EQUATIONS
PARTICLE TRACKING
RADIATIVE RECOMBINATION
CHARGE CARRIER PROCESSES
GEOMETRY
NEODYMIUM
ELECTRON MOBILITY
SPONTANEOUS EMISSION

This publication has 3 references indexed in Scilit:

Charge Collection Measurements for Heavy Ions Incident on n- and p-Type Silicon
IEEE Transactions on Nuclear Science, 1983
Collection of Charge on Junction Nodes from Ion Tracks
IEEE Transactions on Nuclear Science, 1982
A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices
IEEE Electron Device Letters, 1981

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