Thermal switchback in high ftepitaxial transistors
- 1 August 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (8/9), 635-638
- https://doi.org/10.1109/t-ed.1966.15750
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- "Second breakdown" in transistorsIRE Transactions on Electron Devices, 1962