GaInAsP/InP avalanche photodiodes
- 15 April 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (8), 487-489
- https://doi.org/10.1063/1.90095
Abstract
Avalanche photodiodes for detection at 0.9–1.2 μm have been successfully fabricated in epitaxial layers of GaInAsP on InP substrates. Uniform avalanche gains in excess of 12, rise times of 150 psec or less, and low‐bias quantum efficiencies of 45% have been measured.Keywords
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