Luminescence spectra of an n-channel metal-oxide-semiconductor field-effect transistor at breakdown

Abstract

Photon emission occurs from the drain gate boundary of a metal-oxide-semiconductor field-effect transistor when drain bias exceeds the drain-to-source breakdown value. Spectral measurement of luminescence has been carried out over a wide range 0.7–3.1 eV in order to understand the origin of the emission. Three different types of detectors are used to measure the luminescence spectrum. A continuous broad spectrum is observed with a peak near 1.0 eV. The emission intensity decreases almost exponentially in the higher energy range.