Study of the material properties and suitability of plasma-deposited fluorine-doped silicon dioxides for low dielectric constant interlevel dielectrics
- 1 December 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 270 (1-2), 498-502
- https://doi.org/10.1016/0040-6090(95)06704-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon OxideJapanese Journal of Applied Physics, 1994
- Flow Characteristics of SiOF Films in Room Temperature Chemical Vapor Deposition Utilizing Fluoro‐Trialkoxy‐Silane Group and Pure Water as Gas SourcesJournal of the Electrochemical Society, 1993
- An FT-IR study of silicon dioxides for VLSI microelectronicsSemiconductor Science and Technology, 1990
- Fluorinated chemistry for high-quality, low hydrogen plasma-deposited silicon nitride filmsJournal of Applied Physics, 1987