Observation of Order-Disorder Transitions in Strained-Semiconductor Systems
- 12 August 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 55 (7), 765-768
- https://doi.org/10.1103/physrevlett.55.765
Abstract
We report the observation of an order-disorder transition in the semiconductor strained-superlattice system GeSi/Si, which doubles the lattice periodicity in a direction. This phenomenon may be representative of a class of order-disorder transitions in strained-semiconductor systems, even when the lattice mismatch is small.
Keywords
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