Auger recombination and impact ionization involving traps in semiconductors
- 1 December 1964
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 84 (6), 915-931
- https://doi.org/10.1088/0370-1328/84/6/311
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Auger effect involving recombination centresProceedings of the Physical Society, 1964
- Overlap Integrals for Bloch ElectronsProceedings of the Physical Society, 1963
- Recombination statistics for auger effects with applications to p-n junctionsSolid-State Electronics, 1963
- Impact Ionization of Centers in Solids by Electrons Accelerated by an Electric FieldPhysica Status Solidi (b), 1963
- Electrical Conduction in-Type Germanium at Low TemperaturesPhysical Review B, 1962
- Recombination between electrons and atomic ions, I. Optically thin plasmasProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962
- Possible Mechanism for Radiationless Recombination in SemiconductorsPhysical Review B, 1957
- Optical and Impact Recombination in Impurity Photoconductivity in Germanium and SiliconPhysical Review B, 1955