Cleaning and Oxidation of Heavily Doped Si Surfaces
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Control factor of native oxide growth on silicon in air or in ultrapure waterApplied Physics Letters, 1989
- Reversal of Relative Oxidation Rates of and Oriented Silicon Substrates at Low Oxygen Partial PressuresJournal of the Electrochemical Society, 1980
- ELECTRONIC STRUCTURE OF A MODEL Si-SiO2 INTERFACEPublished by Elsevier ,1978