Size effect on different impurity levels in semiconductors
- 1 February 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 49 (7), 697-699
- https://doi.org/10.1016/0038-1098(84)90223-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Zero-phonon recombination spectra of donor-acceptor pairs in GaP and ZnSe: Model-impurity-potential approachPhysical Review B, 1982
- The kinetics of donor-acceptor pair transitions with strong phonon coupling in GaPJournal of Luminescence, 1974
- The dielectric constant of GaP from a refined analysis of donor-acceptor pair luminescence, and the deviation of the pair energy from the coulomb lawJournal of Luminescence, 1973