High-quality MNS capacitors prepared by jet vapor deposition at room temperature
- 1 September 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (9), 482-484
- https://doi.org/10.1109/55.192802
Abstract
The properties of metal-nitride-Si (MNS) capacitors in which the silicon nitride layer is produced by the jet vapor deposition (JVD) technique at room temperature are reported. Despite the room-temperature deposition, the electrical properties of these devices are far better than any previously reported MNS capacitors. Especially remarkable is the low density of interface traps (D/sub it/<5*10/sup 10//cm/sup 2/-eV near midgap). In addition, these MNS capacitors are highly resistant to damage caused by hot electrons and ionizing radiation.Keywords
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