Ti Si 2 ∕ Si heteronanocrystal metal-oxide-semiconductor-field-effect-transistor memory

Abstract

$\mathrm{Ti}{\mathrm{Si}}_2∕\mathrm{Si}$ heteronanocrystals with a density of $5\times {10}^{11}{\mathrm{cm}}^{-2}$ were formed on a thermally oxidized $p$ -type Si substrate by using self-aligned silicide technique. Metal-oxide-semiconductor-field-effect-transistor (MOSFET) memory devices were fabricated using these heteronanocrystals as floating gates. As compared to Si nanocrystal MOSFET memory, $\mathrm{Ti}{\mathrm{Si}}_2∕\mathrm{Si}$ heteronanocrystal memories exhibit higher charge storage capacity, longer retention, better writing efficiency, less writing saturation, and faster erasing speed.