Germanium Fet--A Novel Low-Noise Active Device
- 1 January 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 15 (1), 283-290
- https://doi.org/10.1109/tns.1968.4324865
Abstract
A novel device for low-noise amplification-the germanium junction field-effect transistor (JFET)--is introduced. The properties of germanium and silicon at cryogenic temperatures are summarized. Based on the conclusions of this summary, a theoretical comparison between germanium and silicon JFET's is made, followed by a comparison of commercially available JFET's from both materials. A low-noise preamplifier featuring liquid-helium-cooled germanium JFET's was built and operated with semiconductor radiation detectors. Pulse generator resolution of the preamplifier for zero external capacitance is 0.28 keV FWHM (Ge) with a slope of 0.018 keV/pF. Actual resolution obtained with the silicon detector for low-energy x rays is 0.37 keV.Keywords
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