Temperature dependence of intra-4f-shell photo- and electroluminescence spectra for erbium-doped GaAs

Abstract

Temperature dependencies of linewidth and peak wavelength are studied for the intra‐4f‐shell photoluminescence and electroluminescence spectra of erbium ions incorporated in GaAs by metalorganic chemical vapor deposition. For both the photo‐ and electroluminescence spectra, the magnitudes of the linewidth broadening rate (3×10⁻² cm⁻¹ /deg) and the peak wavelength shift rate (5×10⁻³ cm⁻¹ /deg) are comparable to those of rare‐earth ions in insulators, such as Nd‐doped yttrium aluminum garnet. They are about two orders of magnitude smaller than those for the luminescence line due to band‐to‐band transition of a typical semiconductor (InGaAs) at the same wavelength region.