Coherent, monolithic two-dimensional strained InGaAs/AlGaAs quantum well laser arrays using grating surface emission
- 25 December 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (26), 2721-2723
- https://doi.org/10.1063/1.102256
Abstract
Two-dimensional coherent strained-layer InGaAs/AlGaAs quantum well laser arrays consisting of 100 (10×10) active elements have been fabricated and characterized. The central lobe of the far field has a full width at half power of 0.04°×1°. Observation of about 2 W peak power from either the substrate or the junction surface, with differential quantum efficiencies from each side of about 40%, is reported. The mode spectrum of the emitted power is contained in a ∼2 Å wavelength interval at ∼2 W.Keywords
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