Theory of spin-dependent transport in ferromagnet-semiconductor heterostructures
- 15 October 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (15), 9635-9638
- https://doi.org/10.1103/physrevb.58.9635
Abstract
The formalism of spin-dependent transport is used to calculate the conductance of device structures comprised of a two-dimensional electron-gas (2DEG) channel and ferromagnetic source and/or drain for a variety of magnetization configurations. Among the effects predicted by the calculations is spin-dependent current rectification at a 2DEG-ferromagnet interface.Keywords
This publication has 15 references indexed in Scilit:
- Gate Control of Spin-Orbit Interaction in an Inverted IGAs/IAAs HeterostructurePhysical Review Letters, 1997
- Electronic Transport in Mesoscopic SystemsPublished by Cambridge University Press (CUP) ,1995
- Evidence for spin splitting in heterostructures asPhysical Review B, 1989
- Spin-injection experimentPhysical Review B, 1988
- Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interfacePhysical Review B, 1988
- Thermodynamic analysis of interfacial transport and of the thermomagnetoelectric systemPhysical Review B, 1987
- Oscillatory effects and the magnetic susceptibility of carriers in inversion layersJournal of Physics C: Solid State Physics, 1984
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- New method for a scaling theory of localizationPhysical Review B, 1980
- Electrical resistance of disordered one-dimensional latticesPhilosophical Magazine, 1970