Electron-electron effects in the writing and erasing of dual-dielectric charge-storage cells

Abstract

We have found an abrupt drop in the capture efficiency of dopant‐induced interfacial states in DDC’s when the stored‐charge density exceeds 7×10¹²/cm². The constancy of this number with electric field strength and with increasing capture efficiency from increased induced‐state density suggests Coulombic repulsion ultimately limits writing efficiency. Erasing characteristics are also explained by barrier lowering due to electron‐electron repulsion.