Anomalous frequency dispersion of m.o.s. capacitors formed on n-type GaAs by anodic oxidation

Abstract

The capacitance/voltage characteristics of the metal-oxide-semiconductor system formed on n-type GaAs by anodic oxidation differ greatly from those of p-type GaAs, showing an marked anomalous frequency dispersion which is not caused by the Quast carrier diffusion mechanism, but by an anomalous formation of interface states.