Influence of elastic scattering from neutral impurities on the exciton-polariton photoluminescence lineshape in GaAs
- 31 August 1985
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 34 (1-2), 63-75
- https://doi.org/10.1016/0022-2313(85)90095-x
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Effect of As/Ga flux ratio on the photoluminescence spectra of low donor concentration MBE GaAsJournal of Vacuum Science & Technology B, 1985
- Luminescence from exciton polaritons in weakly excited GaAs based on exciton-electron collisionsPhysics Letters A, 1979
- Reabsorption of the excitonic luminescence in direct band gap semiconductorsPhysical Review B, 1977
- Mechanism of strong resonant 1LO Raman scatteringSolid State Communications, 1976
- On the Exciton Luminescence at Low Temperatures: Importance of the Polariton ViewpointJournal of the Physics Society Japan, 1976
- Polariton Reflectance and Photoluminescence in High-Purity GaAsPhysical Review B, 1973
- Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAsSolid State Communications, 1970
- Contributions of Scattering of Polaritons by Phonons to Emission of Radiation by SolidsPhysical Review B, 1969
- On the Dynamical Behavior of an ExcitonProgress of Theoretical Physics Supplement, 1959
- Theory of the Contribution of Excitons to the Complex Dielectric Constant of CrystalsPhysical Review B, 1958