I-V characteristics of polycrystalline silicon resistors
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12), 777-782
- https://doi.org/10.1051/rphysap:019780013012077700
Abstract
The electrical properties of polycrystalline silicon resistors in the non-linear regime are examined. The adopted model is based on a thermionic-diffusion transport mechanism, and assumes charge trapping at the grain boundary. The theory closely fits experimental I-V characteristics, and allows for the determination of the average grain sizeKeywords
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