Ge epilayer of high quality on a Si substrate by solid-phase epitaxy
- 6 September 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (10), 1405-1407
- https://doi.org/10.1063/1.109691
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Nanocrystalline Ge in SiO2 by annealing of GexSi1−xO2 in hydrogenApplied Physics Letters, 1993
- Wet oxidation of GeSi at 700 °CJournal of Applied Physics, 1992
- Improvement in heteroepitaxial film quality by a novel substrate patterning geometryApplied Physics Letters, 1992
- Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substratesApplied Physics Letters, 1991