InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions grown by metalorganic chemical vapour deposition

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Abstract
InGaAs/InGaAsP/InP avalanche photodiodes with separate absorption, ‘grading’ and multiplication regions (SAGMAPDs) have been fabricated for the first tune from wafers grown by metalorganic chemical vapour deposition (MOCVD) These APDs exhibit low dark current (≃ 32 nA at 90% breakdown) and high-speed pulse response (≃ 100 ps FWHM).