Radiation Hardness of Ovonic Devices
- 1 January 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 15 (6), 311-321
- https://doi.org/10.1109/tns.1968.4325062
Abstract
Ovonic threshold switches have been exposed to pulses of flash X-rays to levels of 1.8×1011 rads/sec and to fast neutron fluences of as high as nvt = 1.2×1017 n/cm2. The switching devices have continued to function during the transient of the X-ray flash and experienced no permanent damage or change of their electrical parameters in excess of the resolution of the experimental testing procedure which was about ±100% in the case of the neutron exposure.Keywords
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