Monolithic integration of fully ion-implanted lateral GaInAs pin detector/InP JFET amplifier for 1.3–1.55 μm optical receivers
- 1 January 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (8), 522-523
- https://doi.org/10.1049/el:19890357