P-Type Doping of the Group V Elements in CuInS2
- 1 December 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (12A), L1562-1565
- https://doi.org/10.1143/jjap.35.l1562
Abstract
We have studied the electronic structures ofp-type doped CuIn(S0.9375V0.0625)2(V=N, P, As, Sb or Bi) based onab-initioelectronic band structure calculations using the augmented spherical wave (ASW) method. We determined that P and Sb atoms are extremely suitable dopants which can be substituted for S atoms inp-type doped CuInS2crystals with lower resistivity. On the other hand,p-type CuInS2crystals doped with N or Bi had a higher resistivity than those doped with P or Sb.Keywords
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