Defects in Cu(In, Ga) Se2 semiconductors and their role in the device performance of thin-film solar cells
- 1 March 1997
- journal article
- Published by Wiley in Progress In Photovoltaics
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Characterizing Plasma-exposed In0.52Al0.48As Surface Using Photoreflectance-, Raman-, and Photoluminescence Spectra MethodCrystal Research and Technology, 1996
- Solar Cells Based on CuInSe2 and Related Compounds: Material and Device Properties and ProcessingProgress In Photovoltaics, 1995
- Electronic effects of ion mobility in semiconductors: Semionic behaviour of CuInSe2Journal of Physics and Chemistry of Solids, 1995
- Excitonic emissions from CuInSe2 on GaAs(001) grown by molecular beam epitaxyApplied Physics Letters, 1995
- On the CdS/CuInSe2 conduction band discontinuityApplied Physics Letters, 1995
- Density of states in CuIn(SSe)2 thin films from modulated photocurrent measurementsJournal of Applied Physics, 1994
- Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2Journal of Applied Physics, 1993
- Origin and consequences of the compensation (Meyer-Neldel) lawPhysical Review B, 1992
- Admittance spectroscopy of impurity levels in Schottky barriersJournal of Applied Physics, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974