X-ray characterization of bulk AIN single crystals grown by the sublimation technique
- 5 February 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 250 (1-2), 244-250
- https://doi.org/10.1016/s0022-0248(02)02253-4
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Seeded growth of AlN bulk single crystals by sublimationJournal of Crystal Growth, 2002
- Progress in the Preparation of Aluminum Nitride Substrates from Bulk CrystalsMRS Proceedings, 2002
- Crystal growth of aluminum nitride under high pressure of nitrogenMaterials Science in Semiconductor Processing, 2001
- High Resolution X-Ray Diffractometry And TopographyPublished by Taylor & Francis ,1998
- Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation MethodJapanese Journal of Applied Physics, 1997
- III–V Nitrides—thermodynamics and crystal growth at high N2 pressureJournal of Physics and Chemistry of Solids, 1995
- Growth of high purity AlN crystalsJournal of Crystal Growth, 1976
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution CoefficientsPhysical Review B, 1973
- Helical DislocationsPhysical Review B, 1957
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956