Characterization of oval defects in molecular beam epitaxy Ga0.7Al0.3As layers by spatially resolved cathodoluminescence
- 18 January 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (3), 224-226
- https://doi.org/10.1063/1.99526
Abstract
Oval defects in silicon‐doped Ga0.7Al0.3As molecular beam epitaxy grown layers are studied by filtered cathodoluminescence at low temperatures (10 K) in a scanning electron microscope. The spectra obtained inside and outside the defects exhibit very different main emission lines which can be explained by an important variation of the Al/Ga ratio at the center of the defects; this hypothesis is confirmed by localized Auger electron spectroscopy.Keywords
This publication has 10 references indexed in Scilit:
- Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of xApplied Physics Letters, 1987
- Classification and origins of GaAs oval defects grown by molecular beam epitaxyJournal of Crystal Growth, 1987
- Classification of Surface Defects on GaAs Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1986
- Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxyApplied Physics Letters, 1986
- Surface morphologies of GaAs layers grown by arsenic-pressure-controlled molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Particulates: An origin of GaAs oval defects grown by molecular beam epitaxyApplied Physics Letters, 1985
- Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAsJapanese Journal of Applied Physics, 1984
- Electrical Properties of Oval Defects in GaAs Grown by MBEJapanese Journal of Applied Physics, 1984
- Spatially resolved photoluminescence at oval defects in molecular beam epitaxial GaAs layersJournal of Crystal Growth, 1984
- Microtwinning and growth defects in GaAs MBE layersJournal of Crystal Growth, 1982