Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxy
- 9 June 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (23), 1603-1605
- https://doi.org/10.1063/1.96830
Abstract
Electron diffraction measurements on (100) GaAs1−xSbx layers with x≊0.5 grown by organometallic vapor phase epitaxy indicate that ordered phases are formed during growth. Two ordered phases are observed. The simple, tetragonal AuCu‐I type phase consists of alternating {100} oriented GaAs and GaSb layers. Only the two variants with the tetragonal c axes perpendicular to the growth direction are observed. At least two variants are observed for the chalcopyrite E11 structure with alternating {210} oriented GaAs and GaSb layers.Keywords
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