High-efficiency avalanche-diode oscillators and amplifiers in X-band

1 March 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 58 (3), 512-513
https://doi.org/10.1109/proc.1970.7683

Abstract

High-efficiency pulsed microwave amplification and oscillation have been obtained at X-band using punch-through silicon p-n junction diodes mounted in a ridged waveguide. Peak powers of 20 W at 30 percent efficiency were measured at 8.6 GHz.

Keywords

OSCILLATORS
FREQUENCY
LIGHT EMITTING DIODES
CIRCUITS
BREAKDOWN VOLTAGE
ATOMIC LAYER DEPOSITION
PULSE AMPLIFIERS
COAXIAL COMPONENTS
IMPURITIES
ATOMIC MEASUREMENTS

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