Magnetic Properties of InAs Diode Electroluminescence

Abstract

Spontaneous and laser electroluminescence of InAs diodes have been studied in magnetic fields up to 109 kG. The peak of the emitted energy shifts linearly with magnetic fields above 20 kG at a rate which depends on the carrier concentration of the n‐type base material. If the energy shift is described as $\mathrm{\Delta E=}\frac{1}{2}\mathrm{\hslash eH/m*c}$ , the value of m* is the same as that measured at the Fermi level in bulk n‐type material. The emission from one laser diode exhibited a splitting which corresponds to a g factor of about 7 for the electron. Evidence was obtained that the laser threshold current is reduced by the component of magnetic field perpendicular to the junction current.