Avalanche Breakdown and Multiplication in Silicon pin Junctions
- 1 July 1965
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 4 (7)
- https://doi.org/10.1143/jjap.4.473
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Charge multiplication in silicon p-n junctionsSolid-State Electronics, 1963
- Avalanche Breakdown in Gallium ArsenideJunctionsPhysical Review B, 1962
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- Uniform Silicon p-n Junctions. I. Broad Area BreakdownJournal of Applied Physics, 1960
- Determination of Avalanche Breakdown in pn JunctionsJournal of Applied Physics, 1959
- Lattice Vibrations in Silicon by Scattering of Cold NeutronsPhysical Review Letters, 1959
- Ionization Rates for Electrons and Holes in SiliconPhysical Review B, 1958
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957
- Theory of Electron Multiplication in Silicon and GermaniumPhysical Review B, 1954
- Avalanche Breakdown in SiliconPhysical Review B, 1954