Epitaxial Vapor Growth of GaAs on Ge Single Crystals
- 1 December 1961
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 16 (12), 2591
- https://doi.org/10.1143/jpsj.16.2591
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Preparation of Crystals of InAs, InP, GaAs, and GaP by a Vapor Phase ReactionJournal of the Electrochemical Society, 1959