Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4), 329-334
- https://doi.org/10.1016/s0022-0248(96)00611-2
Abstract
No abstract availableKeywords
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