Investigation of ion-implantation damage with x-ray double reflection
- 1 February 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (3), 141-143
- https://doi.org/10.1063/1.89329
Abstract
The lattice parameters of boron‐implanted silicon layers have been measured by an x‐ray diffraction technique. The rocking curves show an expansion volume which anneals in several stages: 100, 280, and 400–600 °C. Around 600 °C, an almost stress‐free crystal is found. This result suggests the formation of defect complexes having a compensating effect on the crystal lattice.Keywords
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