Implantation profiles modified by sputtering
- 1 January 1973
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 19 (2), 83-85
- https://doi.org/10.1080/00337577308232223
Abstract
The impurity profiles obtained by ion implantation may be seriously affected by simultaneous sputtering, Saturation conditions are easily achievable in the case of sufficient sputtering yield. A numerical study is made on the basis of a previous model using a simple penetration distribution function. The accordance with experimental results is promising.Keywords
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