Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs–AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
- 1 February 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (2A), L155-158
- https://doi.org/10.1143/jjap.25.l155
Abstract
We have studied microscopic structures of two different interfaces in MBE-grown GaAs–Al x Ga1-x As quantum wells (QWs), and effects of growth interruption on the interface roughness. For QWs with x>0.5, the effective roughness of top (AlGaAs-on-GaAs) interfaces is drastically reduced down to less than 0.2 atomic layer by the growth interruption, whereas bottom (GaAs-on-AlGaAs) interfaces are unaffected and act as pseudo-smooth interfaces even without the interruption. However, for QWs with x<0.3, bottom interfaces are similar to top interfaces, and can be smoothed by the growth interruption. Microscopic models of various heterointerfaces are presented.Keywords
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