Structural Evaluation of GaAs/AlGaAs Heterointerfaces by Atomic-Resolution Electron Micrograph with Clear Contrast
- 1 May 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (5A), L265
- https://doi.org/10.1143/jjap.23.l265
Abstract
Transmission electron microscopy observation was made on GaAs/AlGaAs heterostructures which were grown on (001) GaAs by molecular beam epitaxy. A lattice image with a clear contrast was obtained for the first time. It was found that heterostructures were free from crystal defect both in layers and at interface. By performing a digital image analysis on lattice image, the compositional grading and/or the height of interface roughness were estimated and found to be less than ±1.25 atomic layers.Keywords
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