Profiling of stress induced interface states in short channel MOSFETs using a composite charge pumping technique
- 1 August 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (8), 767-772
- https://doi.org/10.1016/0038-1101(86)90177-2
Abstract
No abstract availableKeywords
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