Time-Resolved Photoluminescence Spectroscopy in Amorphous
- 8 January 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 42 (2), 118-121
- https://doi.org/10.1103/physrevlett.42.118
Abstract
Measurements of time-resolved photoluminescence spectra at 2 K from amorphous on a 10-nsec time scale demonstrate that two independent luminescence processes exist simultaneously. The higher-energy luminescence process at 1.75 eV has a very short lifetime and is rapidly quenched at higher temperatures. The other process appears at lower energy (1.45 eV) and shifts to considerably lower energy with increasing time delay. A model to explain this result is proposed.
Keywords
This publication has 11 references indexed in Scilit:
- Recombination in amorphous semiconductorsPhysical Review B, 1978
- Luminescence with short decay time in arsenic chalcogenide glassesSolid State Communications, 1977
- The lifetime of electrons, holes and excitons before self-trappingJournal of Physics C: Solid State Physics, 1977
- Model for the Electronic Properties of Amorphous SemiconductorsPhysical Review Letters, 1977
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- Luminescence in amorphous semiconductorsAdvances in Physics, 1976
- Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- Radiative recombination in vitreous and single crystal As2S3 and As2Se3Journal of Non-Crystalline Solids, 1970