BSIM: Berkeley short-channel IGFET model for MOS transistors
- 1 August 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 22 (4), 558-566
- https://doi.org/10.1109/jssc.1987.1052773
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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