Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si

Abstract

Epitaxial growth of CaF₂ films onto Si(100) and (111) substrates and the growth of Si films onto the CaF₂/Si structure have been investigated. It has been found from ion channeling and backscattering measurements that the optimum growth temperatures at which the crystalline quality of the CaF₂ films is excellent range from 600 to 800 °C for Si(111) substrates and from 500 to 600 °C for Si (100). It has also been found that a heteroepitaxial Si/CaF₂/Si(111) structure is formed by vacuum deposition of Si onto the heated CaF₂/Si(111) structure.