Performance of High-Power AlInGaN Light Emitting Diodes
- 22 November 2001
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 188 (1), 15-21
- https://doi.org/10.1002/1521-396x(200111)188:1<15::aid-pssa15>3.0.co;2-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- High-power AlGaInN flip-chip light-emitting diodesApplied Physics Letters, 2001
- High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiencyApplied Physics Letters, 1999
- Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric fieldMaterials Science and Engineering B, 1999
- III–V Nitride semiconductors for high-performance blue and green light-emitting devicesJOM, 1997
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995